die d atasheet gap3sht33 - ca u feb 2015 http://www.genesicsemi.com/high - temperature - sic/high - temperature - sic - bare - die/ pg 1 of 4 silicon carbide power schottky diode features ? 33 00 v schottky rectifier ? 210 c maximum operating temperature ? positive temperature coefficient of v f ? f ast switching speeds ? superior figure of merit q c /i f die size = 1.39 mm x 1.39 mm advantages applications ? improved circuit efficiency (lower overall cost) ? significantly reduced switching losses compare to si pin diodes ? ease of paralleling devices without thermal runaway ? smaller heat sink requirements ? low reverse recovery current ? l ow device capacitance ? down hole oil drilling, geothermal instrumentation ? high voltage multipliers ? military power supplies maximum ratings at t j = 175 c, unless otherwise specified parameter symbol conditions values unit repetitive peak reverse voltage v rrm 33 00 v continuous forward current i f t c 1 25 c , r thjc = 1 .69 0. 3 a rms forward current i f(rms) t c 1 25 c , r thjc = 1 .69 0. 35 a surge non - repetitive forward current, half sine wave i f,sm t c = 25 c, t p = 10 ms 2 a t c = 1 25 c, t p = 10 ms 1 non - repetitive peak forward current i f,max t c = 25 c, t p = 10 s 10 a i 2 t value i 2 dt t c = 25 c, t p = 10 ms 0.1 a 2 s power dissipation p tot t c = 25 c , r thjc = 1 .69 89 w operating and storage temperature t j , t stg - 55 to 210 c electrical characteristics at t j = 175 c, unless otherwise specified parameter symbol conditions values unit m in . t yp . m ax . diode forward voltage v f i f = 0. 3 a, t j = 25 c 1 . 7 2.2 v i f = 0. 3 a, t j = 175 c 4.0 5.0 reverse current i r v r = 33 00 v, t j = 25 c 1 10 a v r = 33 00 v, t j = 17 5 c 1 0 10 0 total capacitive charge q c i f i f,max d i f /dt = 35 a/s t j = 175 c v r = 15 00 v 20 nc switching time t s v r = 15 00 v < 60 ns total capacitance c v r = 1 v, f = 1 m hz, t j = 25 c 42 pf v r = 400 v, f = 1 m hz, t j = 25 c 8 v r = 1000 v, f = 1 m hz, t j = 25 c 7 v rrm = 33 00 v i f @ 25 o c = 0. 3 a q c = 20 nc
die d atasheet gap3sht33 - ca u feb 2015 http://www.genesicsemi.com/high - temperature - sic/high - temperature - sic - bare - die/ pg 2 of 4 figures: figure 1: typical forward characteristics figure 2: typical reverse characteristics figure 3 : typical junction capacitance vs reverse voltage characteristic s figure 4 : typical capacitive energy vs reverse voltage characteristic s
die d atasheet gap3sht33 - ca u feb 2015 http://www.genesicsemi.com/high - temperature - sic/high - temperature - sic - bare - die/ pg 3 of 4 mechanical parameters die dimensions 1.39 x 1.39 mm 2 anode pad size 0.75 x 0.75 die area total / active 1.93 / 0.56 die thickness 360 m wafer size 100 mm flat position 0 deg die frontside passivation polyimide anode pad metal lization 400 nm ni + 200 nm au backside cathode metal lization 400 nm ni + 200 nm au die attach electrically conductive glue or solder wire bond au 1 mil reject ink dot size 0.3 mm recommended storage environment store in original container, in dry nitrogen, < 6 months at an ambient temperature of 23 c chip dimensions: die a [mm] 1.39 b [mm] 1.39 metal c [mm] 0.75 d [mm] 0.75
die d atasheet gap3sht33 - ca u feb 2015 http://www.genesicsemi.com/high - temperature - sic/high - temperature - sic - bare - die/ pg 4 of 4 revision history date revision comments supersedes 2015/0212 2 inserted mechanical parameters 2014/12/19 1 updated electrical characteristics 2013/09/09 0 initial release published by genesic semiconductor, inc. 43670 trade center place suite 155 dulles, va 20166 genesic semiconductor, inc. reserves right to make changes to the product specifications and data in this document without notice . genesic disclaims all and any warranty and liability arising out of use or application of any product. no license, express or implied to any intellectual property rights is granted by this document. unless otherwise expressly indicated, genesic products are not designed, tested or authorized for use in life - saving, medical, aircraft n avigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in deat h, personal injury and/or property damage.
die d atasheet gap3sht33 - ca u sep 2013 http://www.genesicsemi.com/high - temperature - sic/high - temperature - sic - bare - die/ pg 1 of 1 spice model parameters this is a secure document. please copy this code from the spice model pdf file on our website ( http://www.genesicsemi.com/images/hit_sic/baredie/schottky/gap3sht33 - cau_spice.pdf ) into ltspice (version 4) software for simulation of the gap3sht33 - ca u . * model of genesic semiconductor inc. * * $revision: 1.0 $ * $date: 04- sep- 2013 $ * * genesic semiconductor inc. * 43670 trade center place ste. 155 * dulles, va 20166 * * copyright (c) 2013 genesic semiconductor inc. * all rights reserved * * these models are provided "as is, where is, and with no warranty * of any kind either expressed or implied, including but not limited * to any implied warranties of merchantability and fitness for a * particular purpose." * models accurate up to 2 times rated drain current. * * start of gap3sht 33- cau spice model * .subckt gap3sht33 anode kathode r1 anode int r=((temp- 24)*0.0535); temperature dependant resistor d1 int kathode gap3sht33_25c; call the 25c diode model d2 anode kathode gap3sht33_pin; call the pin diode model .model gap3sht33_25c d + is 1.39e- 14 rs 2.88 + n 1.0120127 ikf 36.05007504 + eg 1.2 xti - 3 + cjo 6.01e- 11 vj 0.924257443 + m 0.3084545 fc 0.5 + tt 1.00e- 10 bv 3300 + ibv 1.00e- 03 vpk 3300 + iave 3.00e- 01 type sic_schottky + mfg genesic_semiconductor .model gap3sht33_pin d + is 178.99e- 18 rs 15 + n 5 eg 3.23 + xti 50 fc 0.5 + tt 0 bv 3300 + ibv 1.00e- 03 vpk 3300 + iave 3.00e- 01 type sic_pin .ends * end of gap3sht 33- cau spice model
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